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A tiny blue light has the ability to change the world for the better. Of course we are talking about the Blue LED and the importance of this discovery in ushering in low cost energy efficient bright white light sources. The researchers (Isamu Akasaki, Hiroshi Amano and Shuji Nakamura) who made this technology possible were awarded the 2014 Nobel Prize in physics.

The Blue LED is based on an important class of GaN based III-V compound semiconductor materials. GaN based semiconductors have a wide range of applications due to the unique properties of GaN. In addition to being used LEDs they are used in high power and high frequency applications, as laser diodes in Blue Ray Discs, as transistors, as solar cells in outer space and even as biosensors.

The performance of these devices is directly related to the thickness, stacking sequence and atomic arrangement of the individual Al/In/GaN layers that make up these devices. X-ray Diffraction (XRD) is the only non-destructive technique capable of fully characterizing these layers to enable process engineers to understand the correlation between process parameters and device performance in terms of material properties.

It has the ability to characterize important materials properties such as layer thickness, grain size, crystal structure, crystallinity, periodicity, in plane and out of plane lattice constants, strain/relaxation, etc. A fundamental understanding of the materials properties helps the Research and Development and process teams, in terms of designing new recipes, perfecting existing recipes and thereby improving the device performance.

Please join Dr. Madhana Sunder for a complimentary 30 minute interactive webinar followed by a live audience Q&A session discussing data collection and interpretation using the following methods to analyze GaN devices:

• X-ray Reflectivity (XRR)
• Reciprocal Space Mapping (RSM)
• High Resolution Rocking Curves (HRXRD)
• Grazing Incidence Diffraction (GID)

Bruker Webinars